Yung-Hsien Wu (巫勇賢)
1. Kuen-Yi Chen, Pin-Hsuan Chen, and Yung-Hsien Wu*, “Excellent Reliability of Ferroelectric HfZrOx Free from Wake-Up and Fatigue Effects by NH3 Plasma Treatment,” in Symp. on VLSI Tech., Kyoto, Japan, 2017.
2. Yung-Shao Shen, Kuen-Yi Chen, Po-Chun Chen, Teng-Chuan Chen and Yung-Hsien Wu*, “Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer,” Scientific Reports, vol. 7, p. 43659, 2017.
3. Yu-Hsun Chen, Chin-Yu Chen, Cheng-Lin Cho, Ching-Heng Hsieh, Yung-Chun Wu, Kuei-Shu Chang-Liao and Yung-Hsien Wu*, “Enhanced Sub 20-nm FinFET Performance by Stacked Gate Dielectric With Less Oxygen Vacancies Featuring Higher Current Drive Capability and Superior Reliability,” in IEEE International Electron Devices Meeting (IEDM), Washington, USA, 2015.
4. Yung-Chin Fang, Kuen-Yi Chen, Ching-Heng Hsieh, Chang-Chia Su, and Yung-Hsien Wu*, “N‑MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility,” ACS Appl. Mater. Interfaces, vol. 7, no. 48, pp. 26374-26380, 2015.
5. Hsin-Chueh Chu, Yung-Shao Shen, Ching-Heng Hsieh, Jia-Hong Huang, and Yung-Hsien Wu*, “Low-Voltage Operation of ZrO2 -Gated n-Type Thin-Film Transistors Based on a Channel Formed by Hybrid Phases of SnO and SnO2,” ACS Appl. Mater. Interfaces, vol. 7, no. 28, pp. 15129-15137, 2015.
6. Chergn-En Sun, Chin-Yu Chen, Ka-Lip Chu, Yung-Shao Shen, Chia-Chun Lin, and Yung-Hsien Wu*, “ZnO/NiO Diode-Based Charge-Trapping Layer for Flash Memory Featuring Low-Voltage Operation,” ACS Appl. Mater. Interfaces, vol. 7, no. 12, pp. 6383-6390, 2015.